Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction. According to the IR2104 datasheet: “The IR2104(S) are high-voltage, high-speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. I’ve selected two IR2104 2 to drive the MOSFETs. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.” The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. According to the IRF3205 datasheet: “Advanced HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This MOSFET offers nice characteristics that are essential for this application, very low R DS(on) resistance, and high current-handling capability. I’ve selected 4 IR3205 1 to do the switching. Figure 1: Schematic diagram of the H-bridge DC motor driver
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